Abstract
We study the effect of low-temperature post growth annealing on the Fe layer in an epitaxial Fe/GaAs(001) heterojunction. High resolution X-ray diffraction and X-ray reflectivity were used to probe the Fe layer before and after annealing. No change in morphological features like annealing induced intermixing and thickness variation of the Fe layer are observed. However, annealing leads to increase in the compressive strain and improves isotropy of the ferromagnetic layer as revealed by measuring both lateral and out-of-plane lattice components.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
