Abstract
We have investigated the effect of light Si-doping on the optical properties of high quality GaN films with the method of low temperature photoluminescence. It is found that the peak (Ix) at 3.473 eV always appears in the photoluminescence spectra of lightly Si-doped GaN. The relative intensity of peak Ix to heavy-hole free exciton peak increases linearly with the increasing concentration of Si doping, providing a strong support to the assignment that Ix originates from inelastic scattering of free excitons by Si donors. In addition, a rarely reported peak (Px) at 3.365 eV can only be clearly observed in the PL spectrum of unintentionally doped GaN sample. Its intensity is found to reduce dramatically with the decrease of residual carbon concentration based on the secondary ion mass spectrometry analysis. Px is attributed to the excitons bound to carbon-related complex defects.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.