Abstract
Silicide formation in the Co/Si system during ion beam mixing with Kr + at elevated temperatures and subsequent annealing has been studied as a function of Kr + dose, implantation temperature and annealing conditions. It was found that CoSi is formed during ion beam mixing even at room temperature. The formation of Co 2Si is only detected for mixing at a target temperature of 350°C. During the additional thermal treatment at temperatures between 600°C and 1000°C the whole Co-layer reacts with silicon and polycrystalline CoSi 2 grows. The grain size of CoSi 2 was found to depend on Kr + dose, implantation temperature and substrate orientation.
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