Abstract
We investigated the effect of interlayer exchange coupling parameter on switching current density and switching time in the [CoPt-ML]/Ta/CoFeB composite free layer. The fundamental parameters for the micromagnetic model were extracted from experimental results and ab-initio calculations of the Fe/MgO and Fe/Ta interfaces. We found that the critical current density and switching current decrease with decreasing interlayer exchange coupling. It was observed experimentally that perpendicular magnetic anisotropy (PMA) increases with increasing thickness of Ta insertion due to enhancement of CoFeB/MgO interfacial anisotropy, whereas the interlayer exchange coupling strength decreases. Therefore, our modeling and experimental results indicate that the optimized Ta insertion in the composite layer leads to improved thermal stability via combined interface and bulk anisotropies, lower critical current density, and reduced switching time as compared to the composite layer without Ta insertion.
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