Abstract
The effect of diffusion on the analytical representation of current–voltage characteristics is considered in all single-carrier injection regimes being characterized by the essential predominance of the transit current component over the diffusion one and constant level of contact emission. It is shown that the integrally weak diffusion may result in an appreciable restriction of the power of I–U characteristic and a maximum and formation of extra extremum in its dependence on the applied voltage. On this basis a new procedure of determination of bulk and contact parameters of semiconductors is proposed. [Russian text Ignored.]
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