Abstract
Photo-electrical measurements are done on thin films of Se80−x Te20In x (0 ≤ x ≤ 20) to see the effect of In on the photoconductive properties of binary Se80Te20 alloy. The photosensitivity (σph/σd) and activation energy of photoconduction (ΔE ph) are determined for this purpose. It has been found that σph/σd and ΔE ph are decreased with increasing concentration of the third element. The results are explained in terms of the increase in density of the defect states with the increase in concentration of the additive in thin films of Se80−x Te20In x .
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