Abstract
The effect of location, width and doping concentration of impurity charge bumps on the dc and microwave properties of various high efficiency double drift structures of Si Impatt diodes has been investigated for V-band (≃ 60 GHz) operation. The study covers symmetrical Hi-Lo and Lo-Hi-Lo DDR structures as well as asymmetrical structures having Hi-Lo profile on one side of the junction and Lo-Hi-Lo profile on the other side. The Lo-Hi-Lo profile pushes the avalanche centre towards the junction and thereby causes a localization of the avalanche zone, whereas, Hi-Lo profile increases maximum field at the junction which in turn produces higher drift voltage drop. The properties of the optimized DDR structures have been discussed with the help of dc field and current profiles and small signal G-B plots. It is found that both symmetrical Lo-Hi-Lo and asymmetrical Hi-Lo/Lo-Hi-Lo DDR structures would provide high efficiency in the range 18–21% and larger small-signal negative conductance compared to flat DDR stru...
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