Abstract
The oxidation kinetics of β-SiAlON with and without impurities synthesized using α-Al2O3, Si, Al, Fe2O3 or TiO2 powders at 1573 K in microwave sintering furnace, were investigated. The initial oxidation temperature of β-SiAlON with impurities was lower than that sample without impurities. In the initial oxidation stage at 1373–1473 K, the lattice deformation accelerated oxidation rate of β-SiAlON with impurities. However, in the final oxidation stage, the oxidation rate of β-SiAlON with impurities was much lower than that of reference sample, because impurities promote glass film formation on surface of β-SiAlON particles, reducing the chance of β-SiAlON reacting with O2.
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