Effect of implantation temperature on the blistering behavior of hydrogen implanted GaN

Abstract

GaN epitaxial layers were implanted by 100 keV H+ ions at different implantation temperatures (LN2, RT and 300 °C) with a fluence of 2.5×1017 cm−2. The implanted samples were characterized using Nomarski optical microscopy, AFM, XRD, and TEM. Topographical investigations of the implanted surface revealed the formation of surface blistering in the as-implanted samples at 300 °C and after annealing at higher temperature for the implantation at LN2 and RT. The physical dimensions of the surface blisters/craters were dependent on the implantation temperature. XRD showed the dependence of damage-induced stress on the implantation temperature with higher stress for the implantation at 300 °C. TEM investigations revealed the formation of a damage band in all the cases. The damage band was filled with large area microcracks for the implantation at 300 °C, which were responsible for the as-implanted surface blistering.