Abstract
Modifications in the structural and electronic properties of VO2 films induced by N+ ion implantation were investigated. VO2 films prepared by radio frequency (RF) magnetron sputtering deposition on quartz substrate were subjected to the N+ ion beam with 55 keV at different fluences (1 × 1015 and 1 × 1016 ions/cm2). Compared with the pristine VO2 film (Tc ∼ 342 K), structural and electrical phase transition temperatures were shifted around room temperature in the N+ ion implanted sample (fluence = 1 × 1015 ions/cm2). Furthermore, a higher fluence of N+ ions (fluence = 1 × 1016 ions/cm2) had significantly modified the crystalline structure of VO2 thin film, and a metallic behaviour was clearly noticed in the entire temperature range between 240 K and 373 K under this study. N+ ion implantation effectively induces the changes in the electronic structure of VO2 thin films, which are further confirmed by the X-ray absorption spectroscopy (XAS) measurements.
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