Abstract
Characterization of small integrated dipole antennas on high-resistivity Si substrates for use in on-chip wireless interconnection was performed and results were compared with those obtained by 3-dimensional (3D) finite-element simulation. The integrated antennas on standard P-type Si substrates with resistivities of 10 Ω·cm, 79.6 Ω·cm, 132 Ω·cm and 2.29 kΩ·cm, and one high-energy proton-implanted Si substrate were measured. When antenna length was 3.0 mm and antenna distance was 3.0 cm on a 10-Ω·cm-resistivity Si substrate, the antenna transmission gain was -43 dB. The antenna transmission gain was improved to -24 dB on the 2.29 kΩ·cm Si substrate. By using high-resistivity Si substrates, signal transmission via integrated antennas becomes possible.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
