Abstract
Bi2Te2.7Se0.3 of high performance doped with Gd bulk materials was prepared by a high pressure (6.0GPa) sintering (HPS) method at 593K, 633K, 673K and 693K. The sample was then annealed for 36h in a vacuum at 633K. The phase composition, crystal structure and morphology of the sample were analyzed by X-ray diffraction and scanning electron microscopy. The electric conductivity, Seebeck coefficient, and thermal conductivity aspects of the sample were measured from 298K to 473K. The results show that high pressure sintering and the doping with Gd has a great effect on the crystal structure and the thermoelectric properties of the samples. The samples are consisted of nanoparticles before and after annealing, and these nanostructures have good stability at high temperature. HPS together with annealing can improve the TE properties of the sample by decreasing the thermal conductivity of the sample with nanostructures. The maximum ZT value of 0.74 was obtained at 423K for the sample, which was sintered at 673K and then annealed at 633K for 36h. Compared with the zone melting sample, it was increased by 85% at 423K. Hence the temperature of the maximum of figure of merit was increased. The results can be applied to the field of thermoelectric power generation materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Progress in Natural Science: Materials International
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
