Abstract
Since considerable changes take place during heat treatment of cermet films, an attempt was made to study the changes in structure and electrical properties accompanying the heat treatment. A detailed study was done for the films containing 80 and 60 at% bismuth. The Bi−SiO cermet films were prepared by the coevaporation technique on to well cleaned Corning 7059 glass substrates and freshly cleaved NaCl crystals, at room temperature (303 K) in a vacuum better than 1×10 −5 torr
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