Abstract
We investigated the effect of VSb/IIIIn flux ratio and growth temperature on the Bi content of InSbBi material grown on an InSb substrate using molecular beam epitaxy. The Rutherford backscattering spectrum from a bulk InSb0.977Bi0.023 epitaxial film showed a 98.5% substitutional site incorporation of Bi atoms. We demonstrated that a kinetic model of the growth can accurately predict the Bi content by taking into account the extremely low desorption/hopping probability of Sb on the InSb surface due to its low growth temperature and weaker In-Bi bond. The model implies a Bi desorption energy barrier on the InSb surface and an activation energy for Sb to displace Bi of 1.27 eV and 0.29 eV, respectively.
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