Abstract
The effect of geometric anisotropy on the optical nonlinearity enhancement for the composites with metal or semiconductor spheriodal-shaped particles periodically in an insulating host is investigated. The frequency dependences of effective nonlinear susceptibility are calculated with the Stroud-Hui relation and a series expression of space-dependent electric field in periodic composites. The results show that for both metal-insulator (MI) and semiconductor-insulator (SI) composites, nonlinearity enhancement increases almost to its maximum when the percolation networks of the inclusion phase form. The nonlinearity enhancement increases to its maximum when the composites are transformed into the Boyd-Sipe layered composites. The behavior of the nonlinearity enhancement near the percolation threshold is also investigated. A local minimum appears in the nonlinear optical responses at the percolation threshold for the MI composites. For the SI composites the local minimum appears when the ratio of the bound-electron number density to the effective mass of the electron is large.
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