Abstract
Effect of the gate dielectric on the performance of Copper phthalocyanine (CuPc) based top contact organic field effect transistors (OFET) has been studied using thermally grown SiO2 and sputtered HfO x films with dielectric constants of 3.9 and 12.5 respectively. Operating voltages of the devices on SiO2 and HfO x were found to be 10–50 V and 2–3 V, respectively. The lower operating voltage for HfO x is attributed to the higher dielectric constant. Devices on SiO2 and HfO x were found to have field effect mobilities of 0.01 and 3.5 × 10-3 cm2/Vs and drain current modulation of 103 and 102, respectively. Scanning Electron Microscopy showed widely scattered nanowires on HfO x and densely packed nanofibers on SiO2 . X-ray diffraction studies showed better crystallinity of films on SiO2 . The results show that operating voltage of devices can be reduced by using higher dielectric constant material while mobility and FET characteristics depend on structure of CuPc that in turn is influenced by the dielectric.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
