Abstract
Developed a silicon-based photodetector with high sensitivity integrated in the short range. The influence of gamma radiation on the mechanism of current flow in the structure type Schottky barrier, and the p-n junctions. It is shown that the double-barrier structure can improve the photoelectric parameters of conventional detectors.
Highlights
Silicon photodetectors, still the most common type of photoconverters
One of the main ways of increasing the speed and increase the spectral sensitivity of modern detectors with one transition is the creation of multi-barrier structures
First obtained and investigated characteristics of double-barrier structures created on the same plane have shown advantages over conventional structures
Summary
One of the main ways of increasing the speed and increase the spectral sensitivity of modern detectors with one transition is the creation of multi-barrier structures. Reliability of the resulting structures at elevated conditions of radiation, as detectors of ionizing radiation is an important task is the subject of our research [1,2]. Examples are Graded band gap semiconductors structure; dragging fields, etc., based on the reduction of the surface recombination velocity. In our case, such a possibility, but you can create a planar version of the field due to the p-n junction is included in the opposite direction (Figure 1)
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
