Effect of gallium oxide in preventing cristobalite formation in binary borosilicate glass composite

Abstract

When an appropriate mixture of low-softening borosilicate (BSG) and high-softening high silica (HSG) glasses is sintered at temperatures ranging from 800 to 1000 °C, a crystalline phase, identified as cristobalite by XRD, is known to precipitate out of the initial amorphous binary mixture of glasses as the sintering continues. The precipitation of cristobalite is found to originate in HSG and is controlled by the transport of alkali ions (e.g., K, Na, and Li) from BSG to HSG.1 In this paper we report that when a small amount of gallium oxide is present as a dopant in the above binary mixture of BSG and HSG, the cristobalite formation is completely prevented at the sintering temperatures investigated. The above result is attributed to a strong affinity between Ga+3 from gallium oxide particle and alkali ions from BSG, which diverts the diffusion of alkali ions from HSG to gallium oxide, thus forming a K+ and Ga+3-rich reaction layer adjacent to gallium oxide particles far too rapidly compared with that of cristobalite formation.