Abstract
By using a field effect technique, the electron mobility in GaAs at 300K has been studied in two systems where the free electron concentration may be varied over a wide range while the density of ionized impurities is kept constant. These are (a) a thin, almost fully depleted n-type layer on a semi-insulating substrate and (b) a GaAs/Al xGa 1−xAs modulation doped heterojunction. In both cases the mobility falls by more than a factor of two as the free electron concentration is reduced, due to loss of screening.
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