Abstract
We clarified that interfacial barrier metal oxidation with inter layer dielectric (ILD) could be revealed by X-ray photoelectron spectroscopy (XPS) on the peeled-side of the barrier metal, and the barrier metal oxidation was promoted by fluorine contamination which adsorb to the ILD surface during etching. To consider the effect of fluorine contamination on barrier metal oxidation, hydrolysable property of fluorine contamination was evaluated by measuring the change of F 1s spectrum after dipping in boiling water. Moreover, fluoride ions and the acidity of water in which fluorine contamination was dipped were measured by Ion chromatography and pH measurement, respectively. According to our experiments, it was suggested that hydrofluoric acid (HF) acted as an oxidizing catalyst to promote barrier metal oxidation at the interface of barrier metal and ILD.
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