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Effect of external circuit on the self-bias of capacitively coupled plasma driven by tailored voltage waveforms

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In this work, the influences of the direct current blocking capacitor, stray capacitance, and stray resistance in the external circuit on the self-bias driven by tailored voltage waveform (TVW)-driven asymmetric capacitive discharges are investigated using a one-dimensional three-velocity particle-in-cell/Monte Carlo collision model coupled with an external circuit. Under a zero-initial-phase sinusoidal TVW drive with an amplitude ratio of 3:2:1, a dc self-bias voltage is generated and can be significantly modulated by the blocking capacitor, stray resistance, and stray capacitance. The approximate adjustment ranges of each external circuit parameter, as well as an optimized combination of circuit parameters under specific discharge conditions are presented. Based on bias control using a single external component, combined control of multiple external circuit parameters enables a wider tuning range of plasma density, ion flux, and ion energy at the boundary. In addition, the mechanisms responsible for the formation of positive and negative self-bias voltages at different pressures are discussed. These results may provide insight and a theoretical reference for the engineering design of bias control in electrical asymmetric capacitively coupled plasma systems.

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  • 10.1088/1361-6595/aa96e5
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Radio-frequency capacitively coupled plasmas that incorporate structured electrodes enable increases in the electron density within spatially localized regions through the hollow cathode effect (HCE). This enables enhanced control over the spatial profile of the plasma density, which is useful for several applications including materials processing, lighting and spacecraft propulsion. However, asymmetries in the powered and grounded electrode areas inherent to the hollow cathode geometry lead to the formation of a time averaged dc self-bias voltage at the powered electrode. This bias alters the energy and flux of secondary electrons leaving the surface of the cathode and consequentially can moderate the increased localized ionization afforded by the hollow cathode discharge. In this work, two-dimensional fluid-kinetic simulations are used to demonstrate control of the dc self-bias voltage in a dual-frequency driven (13.56, 27.12 MHz), hollow cathode enhanced, capacitively coupled argon plasma over the 66.6–200 Pa (0.5–1.5 Torr) pressure range. By varying the phase offset of the 27.12 MHz voltage waveform, the dc self-bias voltage varies by 10%–15% over an applied peak-to-peak voltage range of 600–1000 V, with lower voltages showing higher modulation. Resulting ionization rates due to secondary electrons within the hollow cathode cavity vary by a factor of 3 at constant voltage amplitude, demonstrating the ability to control plasma properties relevant for maintaining and enhancing the HCE.

  • Research Article
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Optimized Design of Transformers for Application in Silicon Controlled Rectifier Extinction and Ignition Circuits
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In recent years the evolution of more sophisticated military avionic systems has required a corresponding reduction in component size and an increase in component life, precision, and reliability. To satisfy these more difficult design requirements, silicon solid-state devices are being used more extensively in power switching applications. Silicon controlled rectifiers (SCR's) can be used in place of relays or to drive relays with the proper ignition and extinction control circuits. The most general purpose external control circuits are the use of a transformer winding in series or in parallel with the SCR for quenching and a transformer winding connected between the trigger and the cathode for ignition. The use of separate transformers for exact timing and control of SCR's in dc circuits is an optimum control method since transformers have no moving parts and are usually more reliable than relays or pure transistor networks. In ac circuits, where waveform zeros are not used for switching, transformers can provide a convenient, precise method of SCR control. The purpose of this paper is to provide an optimum procedure for the designing of single primary and secondary winding ignition and extinction transformers (as shown in Fig. 1) for controlling SCR's. In addition, this paper provides a transformer core and winding specification synthesis that minimizes the over-all transformer size. A transformer secondary can provide a voltage zero in series with the SCR which allows the center p-n region to naturally recombine its excess charge carriers. It can also reset an SCR by providing both an external short across the SCR and the required SCR reverse current to deplete the excess charge carriers in the region of the center junction. This paper presents six circuits and their design parameters for setting and resetting SCR's. There are two ignition circuits and four quench circuits. For each of the six transformer circuits a relizability theorem, using the external circuit parameters, is provided so that a nonrealizable synthesis can be avoided. Ignition and extinction of SCR's require either a current impulse or a voltage impulse. Consequently the transformer design procedure is based upon certain essential elements of the full equivalent circuit, which is shown in Fig. 2. These transformers are intermittent in operation and do not require phase and amplitude linearity; hence the significant circuit design parameters are the turns ratio N, coil resistances R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ss</inf> and R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sp</inf> , and primary shunt inductance L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</inf> . The procedure developed in this paper is based upon these fundamental transformer parameters with derived criteria for maximum values of leakage inductance L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> and equialent shunt capacitance C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">w</inf> (both referred to the primary side). A simple synthesis procedure is also presented in this paper for the determination of actual transformer core and winding dimensions based upon the equivalent circuit parameters of Fig. 2 and the known external circuit environment.

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  • Dissertation
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