Abstract
Owing to their interesting electronic, mechanical, optical, and transport properties, silicon nanowires (SiNWs) have attracted much attention, giving opportunities to several potential applications in nanoscale electronic, optoelectronic devices, and silicon solar cells. For photovoltaic application, a superficial film of SiNWs could be used as an efficient antireflection coating. In this work we investigate the morphological, optical, and electronic properties of SiNWs fabricated at different etching times. Characterizations of the formed SiNWs films were performed using a scanning electron microscope, ultraviolet–visible-near-infrared spectroscopy, and light-beam-induced-current technique. The latter technique was used to determine the effective diffusion length in SiNWs films. From these investigations, we deduce that the homogeneity of the SiNWs film plays a key role on the electronic properties.
Highlights
Silicon nanowires (SiNWs) have attracted much attention in the recent years due to their importance in the field of electronic devices and photovoltaic [1,2,3,4]
SiNWs could be used as an antireflection coating due to the reduction of optical loss which is an important factor to obtain efficient Si solar cells
When SiNWs are used as an antireflection coating, a great care should be taken to avoid degradation of the electronic properties, which in turn can increase the serial resistance of the solar cell
Summary
Silicon nanowires (SiNWs) have attracted much attention in the recent years due to their importance in the field of electronic devices and photovoltaic [1,2,3,4]. SiNWs could be used as an antireflection coating due to the reduction of optical loss which is an important factor to obtain efficient Si solar cells. When SiNWs are used as an antireflection coating, a great care should be taken to avoid degradation of the electronic properties, which in turn can increase the serial resistance of the solar cell. Different methods have been employed to fabricate SiNWs, such as chemical physical deposition [5], laser ablation [6,7], thermal evaporation [8,9], and etching. We fabricate SiNWs at different durations, ranging from 10 to 90 min
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