Abstract
We investigated electron spin relaxation with respect to the spatial electron–hole separation in GaAs/AlGaAs quantum wells at room temperature. The polarization dependent time-resolved photoluminescence method was used to measure the electron spin relaxation time by applying an electric field perpendicular to the quantum wells. The spin relaxation time had a strong electric field dependence and largely increased with an increase in the spatial electron–hole separation. These results cannot be explained by only the D’yakonov–Perel process, which has often been considered the cause of spin relaxation. We discuss the possible mechanisms that cause the spin relaxation by taking into account the electron–hole exchange interaction.
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