Abstract
The greatest challenge in graphene-based material synthesis is achieving large surface area of high conductivity. Thus, tuning physico-electrochemical properties of these materials is of paramount importance. An even greater problem is to obtain a desired dopant configuration which allows control over device sensitivity and enhanced reproducibility. In this work, substitutional doping of graphene oxide (GO) with nitrogen atoms to induce lattice–structural modification of GO resulted in nitrogen-doped reduced graphene oxide (N-rGO). The effect of doping temperatures and various nitrogen precursors on the physicochemical, optical, and conductivity properties of N-rGO is hereby reported. This was achieved by thermal treating GO with different nitrogen precursors at various doping temperatures. The lowest doping temperature (600 °C) resulted in less thermally stable N-rGO, yet with higher porosity, while the highest doping temperature (800 °C) produced the opposite results. The choice of nitrogen precursors had a significant impact on the atomic percentage of nitrogen in N-rGO. Nitrogen-rich precursor, 4-nitro-ο-phenylenediamine, provided N-rGO with favorable physicochemical properties (larger surface area of 154.02 m2 g−1) with an enhanced electrical conductivity (0.133 S cm−1) property, making it more useful in energy storage devices. Thus, by adjusting the doping temperatures and nitrogen precursors, one can tailor various properties of N-rGO.
Highlights
Functionalization of carbon-based materials, such as graphene and carbon nanotubes for different purposes, is gaining a lot of attention in the field of material science
We report for the first time, the effect of different doping temperatures and solid solid nitrogen precursors on the physicochemical (nitrogen content, crystallinity, thermal stability and nitrogen precursors on the physicochemical, optical and electrical conductivity bonding configuration), optical and electrical properties of nitrogen-doped reduced graphene oxide (N-rGO)
The physicochemical characteristics of N-rGO synthesized with different nitrogen precursors and at different doping temperatures of 600, 700 and 800 ◦ C are presented
Summary
Functionalization of carbon-based materials, such as graphene and carbon nanotubes for different purposes, is gaining a lot of attention in the field of material science. Various bonding configurations of nitrogen in N-rGO have been reported, e.g., pyrrolic-N [25], pyridinic-N [26], quaternary-N [27,28] and oxide-N [29] These bonding configurations impart various effects on the carrier concentration which tend to produce well-defined band structures in doped GO [30]. In the CVD synthesis of N-rGO, several factors including the type of carrier gas, doping temperature and nitrogen precursor (used either as a solid, liquid or in the gaseous phase), influence the nitrogen content and properties of the final product [39,40].
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
