Effect of Deposition Temperature on Some Properties of MOCVD Molybdenum Sulphide Thin Films

Abstract

Molybdenum sulphide thin films were deposited on sodalime glass, silicon wafer and stainless steel (AISI 304L) substrates using Metal Organic Chemical Vapour Deposition (MOCVD) technique at temperatures ranging from 360 o C to 450 o C. The films were characterized using Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four point probe technique, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). Elemental analysis showed that the S/Mo ratio increases from 1.22 to 2.33 with increasing temperature. The optical band gap varies from 1.69 eV to 1.79 eV as deposition temperature increases. The electrical conductivity ranging from 0.5 Ω -1 cm -1 to 1.30 Ω -1 cm -1 also depends on deposition temperature. SEM micrographs of the films showed the layered structure of the film with an estimated grain size that increases from 1.6 µm to 2.4 µm as the deposition temperature increases. This study demonstrates that the properties of the films depend on the deposition temperature.