Abstract

AbstractIn this article we report on the effect of the deposition pressure and the post deposition annealing conditions on the structural and magnetic properties of SmCo thin films deposited on Si(100) wafers employing Ta buffer and capping layers. The films were deposited by DC magnetron sputtering and annealed in vacuum at various temperatures. The films under investigation were isotropic with high remanence magnetization, maximum coercive field of 8 kOe and a squareness ratio of coercivity higher than 0.9. It was found that the Ar pressure during the deposition is a key factor in controlling the stoichiometry and the structural and magnetic properties of the SmCo films, while the effect of the annealing temperature is crucial in optimizing the magnetic properties of the films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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