Abstract
The effect of increasing molar ratio for the concentration of CuO in the compound xCuO:1Gd2O3 (x = 2.0, 2.5, 3.0 and 3.5 mol) produced by solid state reaction method was investigated in this study. Thermoelectric properties such as Seebeck coefficient, the electrical resistivity and power factor were investigated in the temperature range of 400 − 800 K using the instrument, ZEM-3 Series under helium gas atmosphere. Through the inspection, the following results were reported: the electrical resistivity drops as the temperature increases, indicating the semiconductor's characteristic behavior. Seebeck coefficient shows a negative value throughout the temperature range used in the investigation. The power factor can be calculated from the relation of P = S2/ρ (where S is Seebeck coefficient and ρ is electrical resistivity) with the highest value of 4.65 µW−1m−1K−2 at 570 K.
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