Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field

Abstract

Abstract This paper presents incorporating superconducting horizontal magnetic field, a very effective way with low power consumption and high field strength. To improve crystal quality of large diameter Czochralski monocrystalline silicon (CZ-Si) when it grows and to accurately describe the influential process parameters of oxygen distribution on the solid-liquid interface, 3D simulation is running on together with 2D/3D hybrid model established for obtaining boundary conditions. Compared with conventional horizontal magnetic field, the superconducting horizontal magnetic field shows that the increasing magnetic induction intensity helps to adjust the shape of solid-liquid interface, to reduce the oxygen content at the interface and to improve the uniformity of radial oxygen distribution. Further, when crucible is large and melt is deep, the low crucible rotation speed or the low crystal rotation speed is favorable for reducing the oxygen content at the interface. Suitable magnetic induction, low crucible and low crystal rotation speed processes are more conducive to improving the uniformity of the radial oxygen distribution at the interface during the growth. Finally, simulation and experiment results show the effectiveness for the proposed method.