Abstract
AbstractElectrical and magnetic investigations of HgTe doped by Cr are presented. The low temperature features of Hall coefficient magnetoresistance, thermoelectric power and magnetic susceptibility were revealed. They point out to the creation of an impurity level by the Cr dopant and to the behavior of Cr2+(d4) as Van–Vleck ion. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
