Abstract
Polycrystalline copper (Cu) foil is widely used as catalytic substrate for graphene growth in chemical vapor deposition (CVD) technique. The surface properties of the Cu foil strongly affect the growth behavior and final quality of CVD-grown graphene. The effect of pretreatment of Cu foil using four different solutions (acetone, acetic acid, HCl and HNO3) on the graphene growth held in atmospheric pressure CVD and its subsequent impact on electrical and optical properties are investigated. Natural camphor is used as the solid carbon precursor. The surface characteristics before and after the growth are studied using scanning electron microscopy and atomic force microscopy. The pretreatment conditions of Cu and the growth of graphene from camphor were correlated using Raman spectroscopy, optical and electrical characteristics. Our findings suggest that HCl-pretreated Cu foil exhibited large domain, uniform coverage of the transferred graphene with excellent optical (> 93% at 550 nm) and electrical properties (sheet resistance of 861 ± 40 Ω/sq), with promisingly low RMS value of roughness (38 nm). The pretreatment process improved the quality of graphene by removing the surface impurity particles and surface native oxides. A Schottky junction diode of graphene/n-silicon is fabricated by transferring the graphene to SiO2/Si substrate under dark and illuminated conditions is also demonstrated to establish its potential in micro- and opto-electronics.
Highlights
Single-Layer Graphene (SLG), a one-atom-thick sheet of hexagonally arrayed sp2-bonded carbon atoms, has received much attention due to its interesting electrical, mechanical, optical, and thermal properties [1,2,3,4,5,6]
The quality of graphene strongly depends on the nucleation process which gets affected by the surface properties of Cu foils [36, 39, 43]
The particles are partially removed from the Cu foil when it is treated with AA
Summary
Single-Layer Graphene (SLG), a one-atom-thick sheet of hexagonally arrayed sp2-bonded carbon atoms, has received much attention due to its interesting electrical, mechanical, optical, and thermal properties [1,2,3,4,5,6]. The graphene can be produced by various methods such as micromechanical cleavage [1], chemical vapor deposition (CVD) [9, 10], epitaxial growth on Silicon Carbide (SiC) [11] and reduction of graphene oxide [12, 13] Among these techniques, CVD method is emerged as a simple, scalable and straight forward for high-quality, large-area graphene. The electrical and physical properties of CVD grown graphene sheets are limited by polycrystalline nature and smaller grain size of Cu foil It is well-known that Cu is having low carbon solubility and the graphene growth is surfacecatalyzed process which limits to monolayer graphene [27, 28]. A graphene/n-Si schottky junction photodiode by applying the optimally grown graphene is fabricated in above mentioned scheme and demonstrated its device potential
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