Abstract
In this paper, a solution-processing method for fabrication of the titanium-aluminum oxide (TAO) was proposed. Variation of band gap, permittivity, and leakage current density and permittivity of TAO films with different Ti content were investigated. The permittivity and leakage current density of TAO films were proportion to the Ti content, while the bandgap did the reverse. A remarkable enhancement in permittivity (16.5) could be achieved at Ti:Al=0.4:0.6, meanwhile the leakage current density was ∼4 × 10 −7 A/cm 2 at 2 MV/cm.
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