Abstract
The CoFe thickness (tCoFe) dependence of spin injection efficiency was investigated for Co2MnSi/CoFe/n-GaAs junctions. The ΔVNL/I value, which is a measure of spin injection efficiency, strongly depended on tCoFe, where ΔVNL is the amplitude of a nonlocal spin-valve signal, and I is an injection current. Importantly, the maximum value of ΔVNL/I for a Co2MnSi/CoFe/n-GaAs junction was one order of magnitude higher than that for a CoFe/n-GaAs junction, indicating that a Co2MnSi electrode works as a highly polarized spin source. No clear spin signal, on the other hand, was observed for a Co2MnSi/n-GaAs junction due to diffusion of Mn atoms into the GaAs channel. Secondary ion mass spectrometry analysis indicated that the CoFe insertion effectively suppressed the diffusion of Mn into GaAs, resulting in improved spin injection properties compared with those for a Co2MnSi/n-GaAs junction.
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