Abstract
The success of next generation interconnects relies to a large degree on the integration of low-k dielectric (LKD) materials capable of surviving chemical mechanical planarization (CMP). However, little is currently understood about the effect CMP slurry environments have on the reliability of these advanced dielectrics. Accordingly, the focus of this research was to characterize and model the effect of CMP solution chemistry on adhesion and subcritical debond growth in thin-film structures containing LKD materials for future generation devices.
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