Abstract
In order to reduce the residual potential of Se-Te alloy, the alloy is conventionally doped with chlorine in the ranhe from 10 ppm to 500 ppm. However, the addition of large amounts of chlorine decreases the resistivity so that it becomes difficult to maintain the imaging potential. In this study we clarified the effect of small amounts of chlorine (less than 10 ppm) on the electrophotographic properties of Se-Te alloy. It was found that Se-Te alloys doped with about 2 ppm Cl had sufficiently low residual potentials and their dark resistivity was high enough to maintain the imaging potential. It is presumed that the purity of selenium and tellerium is important to obtain the results found in this study.
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