Abstract
Ce-doped CdO thin films with different Cd compositions were prepared on glass and Si wafer substrates by a vacuum evaporation technique. The effects of Ce doping on the structural, electrical, and optical properties of the host CdO films were systematically studied. The X-ray diffraction study shows that some of Ce 4+ ions substituted for Cd 2+ and the solubility of Ce in CdO is very limited and may be around ∼1.3 at%. The cerium doping influences all optoelectrical properties of CdO. The bandgap of Ce-doped CdO suffers narrowing by about 27% with a small (0.5 at%) doping level. The electrical behaviours show that all the prepared Ce-doped CdO films are degenerate semiconductors. Their dc-conductivity, carrier concentration and mobility increase compare with undoped CdO film. The largest mobility of 66.7 cm 2 V −1 s was observed for 3.8% Ce-doped CdO film. From transparent-conducting-oxide point of view, Ce is sufficiently effective for CdO doping.
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