Abstract
The effect of a lightly doped cathode spacer layer on resonant tunneling of Al0.3Ga0.7As-GaAs double-barrier heterostructures is examined. A self-consistent band-bending calculation combined with a quantum calculation of current-voltage characteristics is used to model the experimentally observed I-V curves. It is found that the I-V characteristics show additional structures, sensitively dependent upon temperature. These effects result from the formation of a wide barrier by space-charge reaction in the spacer layer leading to two possible resonant states. The validity of the theoretical approach is supported by the good agreement with experimental results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
