Abstract
AbstractRF magnetron sputter deposited PZT films were prepared on various bottom electrode systems such as Pt/Ti/SiO2/Si, IrO2/SiO2/Si, Pt/IrO2/SiO2/Si and Ir/IrO2/SiO2/Si substrates using the ceramic PZT target with Pb1.1(Zr0.52Ti0.48)O3 composition. In order to obtain single perovskite phase, PZT films were sputter-deposited at room temperature under Ar only plasma condition followed by high temperature annealing under oxygen ambient. Regardless of the bottom electrode system, reasonable ferroelectric properties such as 2Pp, Vc could be obtained by 650°C post annealing. Their values were over 20μ C/cm2 and below ± 1.OV when drive voltage was ± 3V, respectively. Hybrid electrode system, namely, thick Pt or Ir and thin IrO2 shows good leakage current characteristics, of ∼ 10−8A/cm2. Fatigue properties of PZT capacitor depend on the test condition. However, retention after 3×104sec showed a degradation of 15% when writing voltage was −5V irrespective of bottom electrode system. Imprint characteristics also showed good results within ± 1 as a figure of merit (FOM).
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