Abstract
ABSTRACT Varying amount of Bi2O3 excess Bi3.25La0.75Ti3O12 (BLT) ceramics were prepared by solid state reaction and BLT thin films were fabricated on Pt/TiO2/SiO2/Si using RF magnetron sputtering method. The effect of Bi2O3 excess content on the microstructure and ferroelectric properties of the BLT ceramic and thin film was investigated. The X-ray diffraction analysis reveals a layered peroviskite structure phase without pyrochlore phase in all the BLT ceramics with varying amounts of Bi2O3 excess. The SEM micrographs of the BLT ceramics show plate-like morphology. Compared with other BLT thin films with different amount of Bi2O3 excess, the BLT thin film with 10% Bi2O3 excess shows higher degree of squareness and larger remnant value (2Pr). The remnant polarization (2Pr) and coercive voltage (Vc) of the BLT thin film with 10% Bi2O3 excess are about 17.6 μ C/cm2 and 3.7 V, respectively. The BLT thin film with 10% Bi2O3 excess shows the best fatigue resistance characteristics among all the BLT films and just about 9% polarization degradation was observed in the film after 1× 109 read/write switching cycles.
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