Abstract
In this study, the response to a heavy-ion strike and the resulting single effect burnout on beta-Ga2O3 Schottky diodes with biased field rings is investigated via TCAD. The model used to simulate the device under high-reverse bias is validated using experimental current-voltage (I-V) curves. A field ring configuration for the device demonstrates an improved charge removal after simulated heavy-ion strikes. If the time scale for charge removal is faster than single event burnout, this can be an effective mechanism for reducing the effect of single ion strikes. This study explores various configurations of the termination structure and shows the impact of different design parameters in terms of a transient response after the ion strike.
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