Abstract
Influence of the barrier layer composition and thickness on the structural and optical properties of TlInGaAsN Triple quantum wells (TQWs) was studied. Three types of TlInGaAsN TQW structures with different barriers were grown by gas-source molecular-beam epitaxy. Strong photoluminescence emission was obtained at room temperature from the TlInGaAsN TQW samples having 10 nm-thick TlGaAsN barriers, compared with the TlInGaAsN TQWs of 26 nm-thick TlGaAs barriers and those of 30 nm-thick TlGaAsN barriers. Structural investigations revealed that the TQWs with 10 nm-thick TlGaAsN barriers have good structural qualities. On the other hand, the other two samples showed the composition modulations at the interface between the lower side of the 3rd QW layer and the barrier layer. It was found that the addition of nitrogen into barrier layers and the decrease of barrier layer thickness significantly improve the crystalline quality and in turn the luminescence properties of the TlInGaAsN TQWs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
