Abstract
Transparent conductive indium zinc oxide thin films were prepared by spin-coating a sol-gel solution. Zinc acetate dihydrate [<TEX>$Zn(CH_3COO)_2{\cdot}2H_2O$</TEX>] and indium acetate [In<TEX>$(CH_3COO)_3$</TEX>] were used as starting precursors, and 2-methoxyethanol with 1-propanol as solvents. Upon annealing in a temperature range from 500 to <TEX>$1000^{\circ}C$</TEX>, the thin film crystallizes into polycrystalline <TEX>$In_2O_3$</TEX>(ZnO). The lowest electrical resistivity was obtained at an annealing temperature of <TEX>$700^{\circ}C$</TEX> as <TEX>$2{\Omega}{\cdot}cm$</TEX>. Average optical transmittances were higher than 80% at all annealing temperatures. These experimental results confirm that the sol-gel spin-coating can be a good simplified practical method for forming transparent electrodes.
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