Abstract
Vanadium oxide films were prepared on indium-tin oxide glass substrates at low temperature by means of reactive direct current magnetron sputtering and subsequent in-situ annealing process in pure oxygen ambient. In the process of annealing, the oxygen flow rates were varied from 0 to 15 SCCM in order to investigate the effect of annealing oxygen flow rates on the properties of the deposited films. The experimental results indicate that only the vanadium oxide films annealed under relatively high oxygen flow rates (≥ 0.8 SCCM) displayed insulator-metal transition. In addition, it was found that vanadium valence states, surface morphology, optical transmittance and phase transition temperature of the deposited films were sensitive to the annealing oxygen flow rates while the width of thermal hysteresis was relatively insensitive to the annealing oxygen flow rates.
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