Abstract
Thin films of CdSe have been prepared on indium-doped tin oxide-coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4 and SeO2. The process of annealing has been carried out to improve microstructural, optical, and photoelectrochemical properties of the prepared films. X-ray diffraction analysis revealed that as-deposited and annealed films exhibit hexagonal structure with preferential orientation along (002) plane. Nelson-Riley plot analysis has been carried out to determine exact value of lattice constants for as-deposited and annealed films. Optical absorption analysis has been captured to determine the value of optical parameters such as band gap, refractive index, and extinction coefficient of the deposited films. Photoelectrochemical solar cell analysis has been carried out and power output characteristics of the prepared films are investigated.
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