Abstract
We have studied the effects of weak localization and electron-electron interaction in conductivity of Bi films at temperatures between 1.1 and 4.2 K in high-frequency electric field (≅9.4 GHz). The experiments are carried out under conditions of no appreciable overheating of electrons due to microwave radiation. The data obtained permit to examine the influence of temperature on quantum corrections Δσ(ω) in high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δσ(ω,T) are found to be in good agreement with the known theoretical models.
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