Abstract
The effect of ‘Al’ concentration on spin-dependent tunnelling in strained non-magnetic symmetric double-barrier semiconductor has been theoretically investigated. The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reported for the first time in the case of InAs/Ga1−y Al y As heterostructures for various ‘Al’ concentrations and for various barrier widths. Cent percentage polarization can be obtained in this strained non-magnetic double-barrier semiconductor even without any external field.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
