Effect of a magnetic field on fabrication of Si protrusions by local surface melting of a narrow current path on a Si wafer via resistive heating

Abstract

We examined the effect of applying a static magnetic field on the formation of a silicon (Si) protrusion, which was grown on a narrow path of a Si wafer by surface melting of the path via resistive-current heating and re-solidification upon cooling. In the absence of the magnetic field, the surface-melted Si accumulated locally on the narrow path, and a Si protrusion formed upon cooling. In a magnetic field of 0.1 T, a higher and sharper protrusion is formed under an appropriate configuration of the field and current direction. Under the magnetic field, the Lorentz force probably acted on the surface-melted Si through the heating current to draw melted Si in the growth direction of the protrusion. This study demonstrates that the application of a magnetic field is effective for controlling the flow of surface-melted Si and the shape of the Si protrusions via resistive-current heating.