Abstract
We compare the structural, morphological and electrical properties of two variants of the ITO/ZnO/ $$\hbox {CH}_3\hbox {NH}_3\hbox {PbI}_3$$ /PDOT:PSS/Au thin film perovskite device made using two structurally different forms of lead iodide. The first device was based on a commercially sourced, common 12R polytype. The second device uses the rarer 6R polytype, as recently synthesized by the authors from depleted sealed lead acid batteries. XRD measurements confirmed the presence of the orthorhombic 6R polytype and the tetragonal 12R polytype. Raman spectroscopy confirmed the presence of all organic–inorganic halide materials. Current–voltage measurements for both samples show good rectifying behavior of the resulting heterogeneous Schottky diodes. The ideality factors and barrier heights were found to be 4.07/4.09 and 0.500/0.496 eV for the 6R/12R polytypes, respectively. The 6R polytype devices appeared to show improved I–V characteristics in comparison to the 12R polytype, thus suggesting an avenue to enhance the performance of MAPbX3 prevoskite devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
