Abstract
ABSTRACTThe growth of high-quality thin films of the Group IIIA nitrides is exceedingly difficult given their propensity for nonstoichiometry and the lack of suitable substrates for either homoepitaxial or heteroepitaxial growth. A novel deposition technique, ultrahigh vacuum electron cyclotron resonance-assisted reactive magnetron sputtering, has been developed for the preparation of Group IIIA nitride thin films. Thus far, thin films of the semiconductor InN have been deposited on AlN-seeded (00.1) sapphire substrates, and the properties (structural, morphology, and electrical transport) of these films studied as a function of growth temperature. Comparison to InN thin films grown by conventional reactive magnetron sputtering shows enhanced Hall mobilities (from about 50 to over 100 cm2/V-sec), a decreased carrier concentration (by about a factor of 2–3), an increased optical bandgap, and an apparent reduction in homogeneous strain that is in part to be due to film relaxation induced by the ECR beam and in part to enhanced nitrogen content and more nearly stoichiometric films.
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