Abstract
An in situ annealing stage has been developed in-house and integrated in the chamber of a Scanning Electron Microscope equipped with an Electron BackScattered Diffraction system. Based on the Joule effect, this device can reach the temperature of 1200°C at heating rates up to 100°C/s, avoiding microstructural evolutions during heating. A high-purity tantalum deformed sample has been annealed at variable temperature in the range 750°C-1030°C, and classical mechanisms of microstructural evolutions such as recrystallization and grain coarsening phenomena have been observed. Quantitative measurements of grain growth rates provide an estimate of the mean grain boundary mobility, which is consistent with the value estimated from physical parameters reported for that material. In situ annealing therefore appears to be suited for complementing bulk measurements at relatively high temperatures, in the context of recrystallization and grain growth in such a single-phase material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
