Abstract
Interactions between intra-grain defects and metal impurities in multicrystalline silicon (mc-Si) were evaluated. After metal contaminations, EBIC contrasts at > 1.5o SA-GBs were more enhanced than those at Ni/1000 oC > Ni/600 oC. These results might attribute to Fe atoms form deeper energy levels of recombination centers than Ni atoms and the gettering abilities at SA-GBs depend on the misorientation angles. Many dark spots were observed in EBIC images in the Ni/600 oC. Since the dark spots corresponded to the etch pits, the dark spots might be dislocations decorated with Ni. The gettering abilities of SA-GBs depended on the misorientaion angles, and the recombination properties at SA-GBs and dark spots, such as small defects after metal contamination were different by annealing temperatures and the types of metal impurities.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
